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PM002N040AM

40V 120A 1.9mΩ Si Single N-channel Trench MOSFET with Normal Diode

Description

PM002N040AM uses advanced PowerCubeSemi’s MOSFET technology, which provides high performance in on state resistance, fast switching performance and excellent quality. PM002N040AM is suitable device for Synchronous Rectification for Server and general purpose applications.

Features

Si Super junction MOSFET

  • Rated to 40V at 120Amps @TJ = 25℃
  • Max RDS(ON) = 2.3 mΩ.
  • Typ RDS(ON) = 1.9 mΩ
  • Gate Charge(Typ. Qg = 88.3 nC)
  • 100% UIL Tested
  • 100% Rg Tested
Application
  • Server
  • General Purpose

[TO-220]

Datasheet
PM002N040AM