80V 100A 2.9mΩ Si Single N-channel Trench MOSFET with Normal Diode
Description
PM003N080GM uses advanced PowerCubeSemi’s MOSFET technology, which provides high performance in on state resistance, fast switching performance and excellent quality. PM003N080Cm is suitable device for Synchronous Rectification for server and general purpose applications.
Features
Si Super junction MOSFET
- Rated to 80V at 100Amps @TJ = 25℃
- Max RDS(ON) = 3.6 mΩ.
- Typ RDS(ON) = 2.9 mΩ
- Gate Charge(Typ. Qg = 68.5 nC)
- 100% UIL Tested
- 100% Rg Tested
Application
- Server
- General Purpose
[PDFN56]
Datasheet
PM003N080GM
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