100V 120A 3.7mΩ Si Single N-channel Trench MOSFET with Normal Diode
Description
PM004N100DM uses advanced PowerCubeSemi’s MV MOSFET Technology, which provides high performance in on state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as low power drives of E bike (E Vehicles), DC/DC converter, and general purpose applications.
Features
Si Super junction MOSFET
- Rated to 100V at 120Amps @TJ = 25℃
- Max RDS(ON) = 4.4 mΩ.
- Typ RDS(ON) = 3.7 mΩ
- Gate Charge(Typ. Qg = 115 nC)
- 100% UIL Tested
Application
- Electric Vehicles
- DC/DC Converter
- General purpose
[D2PAK(TO-263)]
Datasheet
PM004N100DM
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