80V 120A 4.5mΩ Si Single N-channel Trench MOSFET with Normal Diode
Description
PM005N08AM, PowerCubeSemi’s latest generation of Middle Voltage MOSFET technology, which provides high performance in the lowest RDS(on), fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E bike, Light electric vehicles, DC/DC converter, and general purpose applications.
Features
Si Super junction MOSFET
- Rated to 80V at 120Amps @TJ = 25℃
- Max RDS(ON) = 5.5 mΩ.
- Typ RDS(ON) = 4.5 mΩ
- Gate Charge(Typ. Qg = 61 nC)
- 100% UIL Tested
- 100% Rg Tested
Application
- Low Power Drives
- Light electric vehicles
- DC/DC Converter
- General purpose applications
[TO-220]
Datasheet
PM005N080AM
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