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PM005N135AM

135V 120A 4.2mΩ Si Single N-channel Trench MOSFET with Normal Diode

Description

PM005N135AM, PowerCubeSemi’s latest generation of middle voltage MOSFET technology, which provides high performance in the lowest Rds ( fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as low power drivers of E bike, light electric vehicles, DC/DC converter, and general purpose applications.

Features

Si Super junction MOSFET

  • Rated to 135V at 120Amps @TJ = 25℃
  • Max RDS(ON) = 5.0 mΩ.
  • Typ RDS(ON) = 4.2 mΩ
  • Gate Charge(Typ. Qg = 123 nC)
  • 100% UIL Tested
  • 100% Rg Tested
Application
  • Low Power drives of E-bike
  • Light Electric veheicles
  • DC/DC Converter
  • General purpose

[TO-220]

Datasheet
PM005N135AM