135V 120A 4.2mΩ Si Single N-channel Trench MOSFET with Normal Diode
Description
PM005N135AM, PowerCubeSemi’s latest generation of middle voltage MOSFET technology, which provides high performance in the lowest Rds ( fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as low power drivers of E bike, light electric vehicles, DC/DC converter, and general purpose applications.
Features
Si Super junction MOSFET
- Rated to 135V at 120Amps @TJ = 25℃
- Max RDS(ON) = 5.0 mΩ.
- Typ RDS(ON) = 4.2 mΩ
- Gate Charge(Typ. Qg = 123 nC)
- 100% UIL Tested
- 100% Rg Tested
Application
- Low Power drives of E-bike
- Light Electric veheicles
- DC/DC Converter
- General purpose
[TO-220]
Datasheet
PM005N135AM