150V 120A 4.59mΩ Si Single N-channel Trench MOSFET with Normal Diode
Description
PM005N150DM uses advanced PowerCubeSemi’s middle voltage MOSFET technology, which provides high performance in on state resistance, fast switching performance, and excellent quality. PM005N150DM is suitable device for Motor Drive applications and general purpose applications.
Features
Si Super junction MOSFET
- Rated to 150V at 120Amps @TJ = 25℃
- Max RDS(ON) = 5.40 mΩ.
- Typ RDS(ON) = 4.59 mΩ
- Gate Charge(Typ. Qg = 80 nC)
- Very low on-resistance RDS(ON)
- 100% Avalanche Tested
- 100% Rg Tested
Application
- Industrial Power Supply
- Load switch
- Drivers
[D2PAK(TO-263)]
Datasheet
PM005N150DM
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