150V 120A 6.2mΩ Si Single N-channel Trench MOSFET with Normal Diode
Description
PM007N150AM uses advanced PowerCubeSemi’s middle voltage MOSFET technology, which provides high performance in on state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low power drives of E bike (E vehicles), DC/DC converter, and general purpose applications.
Features
Si Super junction MOSFET
- Rated to 150V at 120Amps @TJ = 25℃
- Max RDS(ON) = 7.5 mΩ.
- Typ RDS(ON) = 6.2 mΩ
- Gate Charge(Typ. Qg = 91 nC)
- 100% UIL Tested
- 100% Avalanche Tested
Application
- Low power Drives of E-bike
- Dc/DC Converter
- Electric Vehicles
- General purpose applications
[TO-220]
Datasheet
PM007N150AM
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