1200V 25A Si Trench Gate Field-Stop IGBT
Description
PSI25120BM is produced using advanced PowerCubeSemi’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
Features
IGBT
- Rated to 1200V at 25Amps @TJ = 100℃
- High Speed Switching & Low VCE(sat) Loss
- High Input Impedance
- Maximum Junction Temperature 175 ℃
- Ultra Soft, fast recovery anti-parallel diode
- Ultra narrowed VF distribution control
- Positive Temperature coefficient for east paralleling
Application
- PFC
- Welder
- UPS
- PV Inverter
[TO-247]
Datasheet
PSI25120BM
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