650V 40A Si Trench Gate Field-Stop IGBT
Description
PSI40065BM is produced using advanced PowerCubeSemi’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
Features
IGBT
- Rated to 650V at 40Amps @TJ = 100℃
- VCE(sat) = 1.8V @IC = 40A
- Maximum Junction Temperature 175 ℃
Application
- Inverters
- Welding Converters
- High-Range Switching Frequency Converters
[TO-247]
Datasheet
PSI40065BM
Language