650V 50A Si Trench Gate Field-Stop IGBT
Description
PSI50065BM is produced using advanced PowerCubeSemi’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
Features
IGBT
- Rated to 650V at 50Amps @TJ = 100℃
- VCE(sat) = 1.8V @IC = 50A
- Eoff =0.55mJ @ TC =25℃
- High Input Impedance
- Trr = 80nS(Typ.) @dIF/dt=1000A/uS
- Maximum Junction Temperature 175 ℃
Application
- PFC
- Welder
- UPS
- PV Inverter
- IH Cooker
[TO-247]
Datasheet
PSI50065BM
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