650V 75A Si Trench Gate Field-Stop IGBT
Description
PSI75065BM is produced using advanced PowerCubeSemi’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
Features
IGBT
- Rated to 650V at 75Amps @TJ = 100℃
- High Ruggedness for Motor Control
- Very soft, Fast Recovery anti-parallel diode
- Low EMI
- Maximum Junction Temperature 175 ℃
Application
- Welder
- UPS
- PV Inverter
[TO-247]
Datasheet
PSI75065BM