Skip to main content

PSI75065BM

650V 75A Si Trench Gate Field-Stop IGBT

Description

PSI75065BM is produced using advanced PowerCubeSemi’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.

Features

IGBT

  • Rated to 650V at 75Amps @TJ = 100℃
  • High Ruggedness for Motor Control
  • Very soft, Fast Recovery anti-parallel diode
  • Low EMI
  • Maximum Junction Temperature 175 ℃
Application
  • Welder
  • UPS
  • PV Inverter

[TO-247]

Datasheet
PSI75065BM