650V 4.7A 900mΩ Si Super junction MOSFET with Normal body diode
Description
PSM04065CM is Power MOSFET using PowerCubeSemi’s advanced Super Junction technology that can realize very low on resistance and gate charge It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as switching loss.
Features
Si Super junction MOSFET
- Rated to 650V at 4.7Amps @TC = 25℃
- Max RDS(on) = 900 mΩ
- Typ RDS(on) = 800 mΩ
- Gate Charge(Typ.Qg = 11.1 nC)
- Low power loss by high speed switching and low On-resistance
- 100% Avalanche Tested
Application
- PFC Power supply stages
- Switching Applications
- Adapter
[DPAK(TO-252)]
Datasheet
PSM04065CM
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