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PSM10065CM

650V 10A 380mΩ Si Super junction MOSFET with Normal Diode

Description

PSM10065CM is Power MOSFET using PowerCubeSemi’s advanced Super Junction Technology that can realize very low on resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.

Features

Si Super junction MOSFET

  • Rated to 650V at 10Amps @TJ = 25℃
  • Max RDS(on) = 380 mΩ
  • Typ RDS(on) = 340 mΩ
  • Gate Charge(Typ.Qg = 20.6 nC)
  • Low power loss by high speed switching and low on-resistance
  • 100% Avalanche Tested
Application
  • PFC power supply stages
  • Switching Applications
  • Adapter

[DPAK(TO-252)]

Datasheet
PSM10065CM