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PSM20065HM

650V 20A 190mΩ Si Super junction MOSFET with Normal body diode

Description

PSM20065HM is Power MOSFET using PowerCubeSemi’s advanced Super Junction Technology that can realize very low on resistance and gate charge It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.

Features

Si Super junction MOSFET

  • Rated to 650V at 20Amps @TJ = 100℃
  • Max RDS(on) = 190 mΩ
  • Typ RDS(on) = 170 mΩ
  • Gate Charge(Typ.Qg = 53 nC)
  • Low power loss by high speed switching and low on-resistance
  • 100% Avalanche Tested
Application
  • LCD/LED/PDP TV
  • Telecom/Server Power supplies
  • AC-DC Power Supply
  • LED Lighting

[TO-220F]

Datasheet
PSM20065HM