600V 53A 70mΩ Si Super junction MOSFET with Normal Diode
Description
PSM50060BM is Power MOSFET using PowerCubeSemi’s advanced Super Junction Technology that can realize very low on resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as switching loss.
Features
Si Super junction MOSFET
- Rated to 600V at 53Amps @TJ = 25℃
- Max RDS(on) = 70 mΩ
- Typ RDS(on) = 63 mΩ
- Gate Charge(Typ.Qg = 132 nC)
- Low Power loss by High-speed switching and Low on-resistance
- 100% Avalanche Tested
Application
- PFC Power Supply Stages
- Switching Applications
- Adapter
- Motor Control
- DC-DC Converters
[TO-247-3Lead]
Datasheet
PSM50060BM
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