800V 4.5A 1200mΩ Si Super junction MOSFET with Zener Diode
Description
PSZ04080HM is Power MOSFET using PowerCubeSemi’s advanced Super Junction technology that can realize very low on resistance and gate charge It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.
Features
Si Super junction MOSFET
- Rated to 800V at 4.5Amps @TJ = 25℃
- Max RDS(on) = 1200 mΩ
- Typ RDS(on) = 950 mΩ
- Gate Charge(Typ.Qg = 11 nC)
- Low Power Loss by High-Speed Switching and Low on-resistance
- 100% Avalanche Tested
- Excellent ESD robustness
Application
- PFC Power Supply Stages
- Switching Applications
- Adapter
[TO-220F]
Datasheet
PSZ04080HM
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