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PSZ10080HM

800V 11A 450mΩ Si Super junction MOSFET with Zener Diode

Description

PSZ10080HM is Power MOSFET using PowerCubeSemi’s advanced Super Junction technology that can realize very low on resistance and gate charge It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.

Features

Si Super junction MOSFET

  • Rated to 800V at 11Amps @TJ = 25℃
  • Max RDS(on) = 450 mΩ
  • Typ RDS(on) = 390 mΩ
  • Gate Charge(Typ.Qg = 25 nC)
  • Low Power Loss by High-Speed Switching and Low on-resistance
  • 100% Avalanche Tested
  • Excellent ESD robustness
Application
  • PFC Power Supply Stages
  • Switching Applications
  • Adapter

[TO-220F]

Datasheet
PSZ10080HM