-100V -35A 35mΩ Si Single P-ch Enhancement Mode MOSFET with Normal Diode
Description
The PM035P100DG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Features
Si P-Ch Enhancement Mode Power MOSFET
- Rated to -100V at -35Amps @TJ = 25℃
- Max RDS(ON) = 35 mΩ.
- Typ RDS(ON) = 29 mΩ
- Gate Charge(Typ. Qg = 41 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[D2PAK(TO-263)]
Datasheet
PM035P100DG