100V 288A 2.2mΩ Si Single N-ch Enhancement Mode Power MOSFET with Normal Diode
Description
The PM002N100BG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Features
Si Single N-Ch enhancement Mode Power MOSFET
- Rated to 100V at 288Amps @TJ = 25℃
- Max RDS(ON) = 2.2 mΩ.
- Typ RDS(ON) = 1.65 mΩ
- Gate Charge(Typ. Qg = 165 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[TO-247]
Datasheet
PM002N100BG
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