60V 223A 3.0mΩ Si Single N-ch Enhancement Mode MOSFET with Normal Diode
Description
The PM003N060DG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Features
Si N-Ch Enhancement Mode Power MOSFET
- Rated to 60V at 223Amps @TJ = 25℃
- Max RDS(ON) = 3.0 mΩ.
- Typ RDS(ON) = 2.4 mΩ
- Gate Charge(Typ. Qg = 101 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[D2PAK(TO-263)]
Datasheet
PM003N060DG
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