650V 10A 360mΩ Si Super junction MOSFET with Normal body diode
Description
PSM10065C is PowerCubeSemi’s second generation of high voltage Super Junction MOSFET that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy Consequently, the combination of Super Junction MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
Features
Si Super junction MOSFET
- Rated to 650V at 10Amps @TC = 25℃
- Max RDS(on) = 360 mΩ
- Typ RDS(on) = 340 mΩ
- Gate Charge(Typ.Qg = 20 nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
Application
- LCD/LED/PDP TV
- Telecom/Server Power supplies
- AC-DC Power Supply
- LED Lighting
[DPAK(TO-252)]
Datasheet
PSM10065C
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