800V 6A 900mΩ Si Super junction MOSFET with Zener Diode
Description
PSZ06080H is Power MOSFET using PowerCubeSemi’s advanced Super Junction technology that can realize very low on resistance and gate charge It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.
Features
Si Super junction MOSFET
- Rated to 800V at 6Amps @TJ = 25℃
- Max RDS(on) = 900 mΩ
- Typ RDS(on) = 780 mΩ
- Gate Charge(Typ.Qg = 16 nC)
- Low Power Loss by High-Speed Switching and Low on-resistance
- 100% Avalanche Tested
Application
- PV Inverter
- Renewable Energy
- Industrial Power
- LED Lighting
- Low Power Charger & Adapter
[TO-220F 3Lead]
Datasheet
PSZ06080H
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