650V 4A 2.7Ω Si Single N-channel Planar MOSFET
Features
Si Single N-Channel Planar MOSFET
- Rated to 650V at 4Amps @TC = 25℃
- Max RDS(on) = 2.7Ω
- Typ RDS(on) = 2.5Ω
- Low Gate Charge(Typ.Qg = 12nC)
- Low Capacitance Fast Switching
- 100% UIS TESTED
Application
- High Frequency Switching Mode Power Supply
- Electronic Ballast
- LED Power Supply
[TO-220F]
Datasheet
RTK4N65F
Language