40V 50A 7.0mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT700N040Q is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 40V at 50Amps @TC = 25℃
- Max RDS(on) = 7.5 mΩ
- Typ RDS(on) = 7.0 mΩ
- Gate Charge(Typ.Qg = 15 nC)
- Surface-mounted package
- Advanced Trench Cell Design
- Super Trench
Application
- LCD TV Applications
- High Power Inverter system
- LCDM Applications
[PDFN3333]
Datasheet
PGT700N040Q
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