60V 80A 8mΩ Si Single N-ch Enhancement Mode MOSFET with Normal Diode
Description
The PM008N060CG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Features
Si N-Ch Enhancement Mode Power MOSFET
- Rated to 60V at 80Amps @TJ = 25℃
- Max RDS(ON) = 8.0 mΩ.
- Typ RDS(ON) = 6.6 mΩ
- Gate Charge(Typ. Qg = 77 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[DPAK(TO-252)]
Datasheet
PM008N060CG
Language