60V 90A 12mΩ Si Single N-ch Enhancement Mode MOSFET with Normal Diode
Description
The PM012N060DG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Features
Si N-Ch Enhancement Mode Power MOSFET
- Rated to 60V at 90Amps @TJ = 25℃
- Max RDS(ON) = 12 mΩ.
- Typ RDS(ON) = 9 mΩ
- Gate Charge(Typ. Qg = 36.6 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[D2PAK(TO-263)]
Datasheet
PM012N060DG
Language