800V 6A 900mΩ Si Super junction MOSFET with Zener Diode
Description
PSZ06080C is PowerCubeSemi’s second generation of high voltage Super Junction MOSFET that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, the combination of Super Junction MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
Features
Si Super junction MOSFET
- Rated to 800V at 6Amps @TJ = 25℃
- Max RDS(on) = 900 mΩ
- Typ RDS(on) = 780 mΩ
- Gate Charge(Typ.Qg = 16 nC)
- Low Power Loss by High-Speed Switching and Low on-resistance
- 100% Avalanche Tested
Application
- PFC Power Supply Stages
- LED Lighting
- Low Power Charger & Adapter
- Industrial Power
- PV Inverter
DPAK [TO-252]
Datasheet
PSZ06080C
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