60V 350A 0.65mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT065N060D7 is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 60V at 350Amps @TC = 25℃
- Max RDS(on) = 0.75 mΩ
- Typ RDS(on) = 0.65 mΩ
- Gate Charge(Typ.Qg = 254 nC)
- Surface-mounted package
- Advanced Trench Cell Design
Application
- E-Tool Applications
- High Power Inverter System
- BMS Appilcations
- Invter Applications
[TO-263-7Lead]
Datasheet
PGT065N060D7
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