100V 300A 1.1mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT110N100D7 is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 100V at 300Amps @TC = 25℃
- Max RDS(on) = 1.3 mΩ
- Typ RDS(on) = 1.1 mΩ
- Gate Charge(Typ.Qg = 244 nC)
- Surface-mounted package
- Advanced Trench Cell Design
- Super Trench
- MSL1
Application
- Light Electric Vehicles
- High Power Inverter System
- BMS Appilcations
- Drone Applications
[TO-263-7Lead]
Datasheet
PGT110N100D7
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