100V 60A 6.8mΩ Si Single N-channel Trench MOSFET with Normal Diode
Description
PM002N100CM uses advanced PowerCubeSemi’s middle voltage MOSFET technology, which provides high performance in on state resistance, fast switching performance, and excellent quality. PM002N100CM is suitable device for Motor Drive applications and general purpose applications.
Features
Si Super junction MOSFET
- Rated to 100V at 60Amps @TJ = 25℃
- Max RDS(ON) = 7.8 mΩ.
- Typ RDS(ON) = 6.8 mΩ
- Gate Charge(Typ. Qg = 72 nC)
- Very low on-resistance RDS(ON)
- 100% Rg Tested
- 100% Avalanche Tested
Application
- Synchronous Rectification
- Switching Applications
[DPAK(TO-252)]
Datasheet
PM007N100CM
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