100V 120A 4.5mΩ Si Single N-ch Enhancement Mode Power MOSFET with Normal Diode
Description
The PM004N100DG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
Si Single N-CH Enhancement Mode Power MOSFET
- Rated to 100V at 120Amps @TJ = 25℃
- Max RDS(ON) = 4.5 mΩ.
- Typ RDS(ON) = 3.8 mΩ
- Gate Charge(Typ. Qg = 60 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[TO-263(D2PAK)]
Datasheet
PM004N100DG
Language