20V 6A 11.3mΩ Si Single N-ch Enhancement Mode Power MOSFET with Normal Diode
Description
The PM011N020SG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Features
Si Single N-Ch enhancement Mode Power MOSFET
- Rated to 20V at 6Amps @TJ = 25℃
- Max RDS(ON) = 11.3 mΩ.
- Typ RDS(ON) = 9.5 mΩ
- Gate Charge(Typ. Qg = 12.5 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[SOT-23]
Datasheet
PM011N020SG
Language