120V 65A 12mΩ Si Single N-ch Enhancement Mode Power MOSFET with Normal Diode
Description
The PM012N120CG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
Si Single N-CH Enhancement Mode Power MOSFET
- Rated to 120V at 65Amps @TJ = 25℃
- Max RDS(ON) = 12 mΩ.
- Typ RDS(ON) = 9.5 mΩ
- Gate Charge(Typ. Qg = 50 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[DPAK(TO-252)]
Datasheet
PM012N120CG
Language