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PGT048N040T

40V 542A 0.48mΩ Si N-Channel Enhancement Mode Split gate MOSFET

Description

PGT048N040T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

SGT MOSFET

  • Rated to 40V at 542Amps @TC = 25℃
  • Max RDS(on) = 0.55 mΩ
  • Typ RDS(on) = 0.48 mΩ
  • Gate Charge(Typ.Qg = 157 nC)
  • Surface-mounted package
  • Advanced Trench Cell Design
Application
  • LCD TV Applications
  • High Power Inverter System
  • LCDM Applications

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Datasheet
PGT048N040T