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PGT060N030T

30V 260A 0.6mΩ Si N-Channel Enhancement Mode Split gate MOSFET

Description

PGT060N030T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

SGT MOSFET

  • Rated to 30V at 260Amps @TC = 25℃
  • Max RDS(on) = 0.66 mΩ
  • Typ RDS(on) = 0.6 mΩ
  • Gate Charge(Typ.Qg = 247 nC)
  • Surface-mounted package
  • Advanced Trench Cell Design
Application
  • LCD TV Applications
  • High Power Inverter System
  • LCDM Applications

[TOLL-8L]

Datasheet
PGT060N030T