60V 300A 0.67mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT067N060LF is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 60V at 300Amps @TC = 25℃
- Max RDS(on) = 0.75 mΩ
- Typ RDS(on) = 0.67 mΩ
- Gate Charge(Typ.Qg = 155 nC)
- Surface-mounted package
- Low Termal Resistance
Application
- Motor Drivers
- DC-DC Converter
[LFPAK5060]
Datasheet
PGT067N060LF
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