30V 271A 0.75mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT075N030G is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 30V at 271Amps @TC = 25℃
- Max RDS(on) = 0.85 mΩ
- Typ RDS(on) = 0.75 mΩ
- Gate Charge(Typ.Qg = 194 nC)
- Advanced Trench Cell Design
- Low Thermal Resistance
- MSL1
Application
- Motor Drivers
- DC-DC Converter
[PDFN5060]
Datasheet
PGT075N030G
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