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PGT084N040T

40V 400A 0.84mΩ Si N-Channel Enhancement Mode Split gate MOSFET

Description

PGT084N040T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

SGT MOSFET

  • Rated to 40V at 400Amps @TC = 25℃
  • Max RDS(on) = 0.95 mΩ
  • Typ RDS(on) = 0.84 mΩ
  • Gate Charge(Typ.Qg = 148 nC)
  • Surface-mounted package
  • Advanced Trench Cell Design
  • Super Trench
  • MSL1
Application
  • Power Applications
  • High Power Inverter System
  • BMS Applications
  • E-Tool Applications

[TOLL-8L]

Datasheet
PGT084N040T