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PGT085N040D7

40V 400A 0.85mΩ Si N-Channel Enhancement Mode Split gate MOSFET

Description

PGT085N040D7 is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

SGT MOSFET

  • Rated to 40V at 400Amps @TC = 25℃
  • Max RDS(on) = 0.95 mΩ
  • Typ RDS(on) = 0.85 mΩ
  • Gate Charge(Typ.Qg = 148 nC)
  • Surface-mounted package
  • Advanced Trench Cell Design
  • Super Trench
  • MSL1
Application
  • Light Electric Vehicles
  • High Power Inverter System
  • BMS Appilcations
  • Drone Applications

[TO-263-7Lead]

Datasheet
PGT085N040D7