30V 100A 1.4mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT140N030Q is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 30V at 100Amps @TC = 25℃
- Max RDS(on) = 1.6 mΩ
- Typ RDS(on) = 1.4 mΩ
- Gate Charge(Typ.Qg = 46 nC)
- Surface-mounted package
- Advanced Trench Cell Design
Application
- MB and NB
- Half-Bridge Drivers
- Motor Drivers
[PDFN3333]
Datasheet
PGT140N030Q
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