100V 292A 1.6mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT160N100T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 100V at 292Amps @TC = 25℃
- Max RDS(on) = 2.8 mΩ
- Typ RDS(on) = 1.6 mΩ
- Gate Charge(Typ.Qg = 168 nC)
- Surface-mounted package
- Advanced Trench Cell Design
Application
- LCD TV Applications
- High Power Inverter System
- LCDM Applications
[TOLL-8L]
Datasheet
PGT160N100T
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