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PGT200N085T

85V 280A 2.0mΩ Si N-Channel Enhancement Mode Split gate MOSFET

Description

PGT200N085T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

SGT MOSFET

  • Rated to 85V at 280Amps @TC = 25℃
  • Max RDS(on) = 2.0 mΩ
  • Gate Charge(Typ.Qg = 138 nC)
  • Surface-mounted package
  • Advanced Trench Cell Design
  • Super Trench
  • MSL1
Application
  • Inverter Applications
  • High Power Inverter System
  • BMS Applications
  • E-Tool Applications

[TOLL-8L]

Datasheet
PGT200N085T