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PGT240N085T

85V 220A 2.4mΩ Si N-Channel Enhancement Mode Split gate MOSFET

Description

PGT240N085T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

SGT MOSFET

  • Rated to 85V at 220Amps @TC = 25℃
  • Max RDS(on) = 2.8 mΩ
  • Typ RDS(on) = 2.4 mΩ
  • Gate Charge(Typ.Qg = 124 nC)
  • Surface-mounted package
  • Advanced Trench Cell Design
  • Super Trench
  • MSL1
Application
  • Drones Applications
  • High Power Inverter System
  • BMS Applications
  • Light Electric Vehicles

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Datasheet
PGT240N085T