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PGT380N150T

150V 250A 3.8mΩ Si N-Channel Enhancement Mode Split gate MOSFET

Description

PGT380N150T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

SGT MOSFET

  • Rated to 150V at 250Amps @TC = 25℃
  • Max RDS(on) = 4.5 mΩ
  • Typ RDS(on) = 3.8 mΩ
  • Gate Charge(Typ.Qg = 158 nC)
  • Surface-mounted package
  • Advanced Trench Cell Design
  • Super Trench
  • MSL1
Application
  • Power Tool Applications
  • High Power Inverter System
  • BMS Applications

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Datasheet
PGT380N150T