120V 180A 5.0mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT500N120D7 is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 120V at 180Amps @TC = 25℃
- Max RDS(on) = 5.5 mΩ
- Typ RDS(on) = 5.0 mΩ
- Gate Charge(Typ.Qg = 91 nC)
- Surface-mounted package
- Advanced Trench Cell Design
- MSL1
Application
- Drone Applications
- High Power Inverter System
- BMS Applications
- Light Electric Vehicles
[TO-263-7Lead]
Datasheet
PGT500N120D7
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