200V 114A 6.4mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT640N200T is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 200V at 114Amps @TC = 25℃
- Max RDS(on) = 7.5 mΩ
- Typ RDS(on) = 6.4 mΩ
- Gate Charge(Typ.Qg = 186 nC)
- Surface-mounted package
- Advanced Trench Cell Design
Application
- LCD TV Applications
- High Power Inverter System
- LCDM Applications
[TOLL-8L]
Datasheet
PGT640N200T
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