150V 90A 7.95mΩ Si N-Channel Enhancement Mode Split gate MOSFET
Description
PGT795N150G is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
SGT MOSFET
- Rated to 150V at 90Amps @TC = 25℃
- Max RDS(on) = 8.8 mΩ
- Typ RDS(on) = 7.95 mΩ
- Gate Charge(Typ.Qg = 68 nC)
- Low Thermal Resistance
- Advanced Trench Cell Design
- Super Trench
- MSL1
Application
- Motor Drivers
- DC-DC Converter
[PDFN5060]
Datasheet
PGT795N150G
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