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PGT880N030Q

30V 34A 8.8mΩ Si N-Channel Enhancement Mode Split gate MOSFET

Description

PGT880N030Q is designed with Split Gate Trench technology. The resulting device has extremely low on resistance,making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

SGT MOSFET

  • Rated to 30V at 34Amps @TC = 25℃
  • Max RDS(on) = 9.5 mΩ
  • Typ RDS(on) = 8.8 mΩ
  • Gate Charge(Typ.Qg = 20 nC)
  • Surface-mounted package
  • Low Thermal Resistance
Application
  • DC-DC Converter
  • Motor Drivers

[PDFN3333]

Datasheet
PGT880N030Q