100V 362A 1.6mΩ Si Single N-ch Enhancement Mode Power MOSFET with Normal Diode
Description
The PM001N100TG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
Si Single N-CH Enhancement Mode Power MOSFET
- Rated to 100V at 362Amps @TJ = 25℃
- Max RDS(ON) = 1.6 mΩ.
- Typ RDS(ON) = 1.3 mΩ
- Gate Charge(Typ. Qg = 165 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[TOLL 8L]
Datasheet
PM001N100TG
Language