60V 223A 2.7mΩ Si Single N-ch Enhancement Mode MOSFET with Normal Diode
Description
The PM002N060AGH uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
Si N-CH Enhancement Mode Power MOSFET
- Rated to 60V at 223Amps @TJ = 25℃
- Max RDS(ON) = 2.7 mΩ.
- Typ RDS(ON) = 2.2 mΩ
- Gate Charge(Typ. Qg = 101 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[TO-220]
Datasheet
PM002N060AGH
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